F28F010-90 Datasheet Breakdown: Key Specs & Pinout

28 December 2025 0

The F28F010-90 is a 1 Mbit (128K x 8) parallel flash device with a typical fast-read access of 90 ns. This practical datasheet breakdown extracts the numbers, pinout, timing and design guidance engineers need to integrate the device into legacy and low-cost embedded systems. The introduction highlights top-line specs, package pin mapping and the wiring cautions that minimize integration risk.

This article draws on hands-on integration experience and datasheet figures to present copy-ready spec bullets, a clear pin mapping table, timing translations and a compact checklist engineers can use during layout and firmware bring-up. The goal is actionable guidance—what to obey as absolute limits and what is typical behavior to expect in the lab.

Background: Device Overview & Key Specs (background introduction)

F28F010-90 Datasheet Breakdown: Key Specs & Pinout

Key specs at a glance

Density and organization: 1 Mbit = 128K x 8. Nominal supply: 5 V family. Typical fast-read access: 90 ns (tACC). Typical program/erase cycles and data retention are specified in the official device documentation; endurance is in the 10^4–10^5 cycle region for standard parts, with retention guaranteed for years under recommended storage conditions. This H3 lists the essential top-line numbers engineers copy into spec sheets for quick design decisions.

Typical use cases & why it still matters

The device is useful for firmware storage on legacy MCUs, boot ROMs, and small-scale embedded logging where low cost and simple parallel interface trump density or serial bandwidth. Compatibility concerns include address-bus width, 8-bit parallel timing and 5 V signaling. Migration flags: parallel-to-serial bridging, voltage level translation and rework to accommodate larger linear address spaces in modern MCUs.

Pinout & Package Details (pinout)

Pin mapping for common packages (32‑pin DIP/PLCC/TSOP)

Below is a concise pin-number → signal mapping for the common 32-pin DIP variant. Address lines run A0–A16 (some high address pins multiplexed in package variants), data lines DQ0–DQ7, and control signals include /CE, /OE, /WE, VCC, GND and VPP/NC as applicable. Mechanical notes: TSOP variants require careful footprint control for solder fillet and coplanarity; DIP variants need stable socketing and lead cleanup before PCB insertion.

PinSignal
1A16
2A15
3A14
4A13
5A12
6A11
7A10
8A9
9A8
10A7
11A6
12A5
13A4
14A3
15A2
16A1
17A0
18DQ0
19DQ1
20DQ2
21DQ3
22DQ4
23DQ5
24DQ6
25DQ7
26/OE#
27/WE#
28/CE#
29VPP or NC
30GND
31VCC
32NC or manufacturer reserved

Pin descriptions & practical wiring notes

Power pins: VCC should be decoupled with a 0.1 μF ceramic close to the package and a 10 μF bulk nearby; VCC pins must have short, low-impedance return paths to GND. Address pins: treat as static-driven during reads; avoid floating high-order address lines. Data pins: use series resistors (22–47 Ω) to damp reflections on long runs. Control pins: assert /CE, /OE and /WE to defined inactive levels via pull-ups/pull-downs to avoid accidental writes during reset or bus contention.

Electrical Characteristics & Timing Analysis (data analysis)

Absolute ratings & recommended operating conditions

Absolute maximums include supply over/under-voltage limits and input clamp thresholds—exceeding these risks permanent damage. Recommended operating VCC range centers on nominal 5 V ± tolerance; input voltages should never exceed VCC + 0.5 V or fall below GND −0.5 V. Static currents vary by device state; read and standby currents are typical and specified separately. Endurance and retention figures must be respected: program/erase cycles are finite and data-retention guarantees presume proper operating and storage conditions.

AC timing: read, program and erase timings explained

tACC (90 ns) defines the typical address-to-data valid time for a fast read; for N sequential reads from random addresses, throughput ≈ 1/(tACC + bus overhead). Example: reading 256 bytes sequentially at 90 ns per access yields a raw latency floor of ≈23 ms, excluding bus arbitration. Programming and block-erase times are orders of magnitude larger—milliseconds to seconds—so firmware must implement status polling with timeouts and retry logic to avoid infinite waits.

Programming, Erase & Protection (method guide)

Programming & erase sequences (practical steps)

Typical flow: 1) Issue command sequence to enter program mode; 2) present address and data; 3) pulse /WE per timing; 4) poll status register until complete; 5) verify by read-back. Use timeouts slightly above the maximum guaranteed program or erase time. Example pseudocode: write_page(addr,data); start_timer(max_program_ms); while (!status.done && !timer.expired) poll_status(); if (!status.done) flag_error(); verify_read(addr,data);

Sector protection & data integrity strategies

Protect critical regions using hardware write-protect pins where available and software locking protocols. Use CRC or small ECC for firmware images and a two-bank update strategy with bootloader fallback to prevent bricking. Implement watchdog-triggered rollback and conservative timeout values during in-field updates. Track erase/program cycle counts per block to schedule preemptive replacements in long-lived deployments.

Practical Design Checklist & Troubleshooting (action advice)

Integration checklist (power, layout, interface)

Copy this checklist into design reviews: 1) Place 0.1 μF decoupling within 2 mm of VCC pin and 10 μF bulk on board; 2) Keep address and data traces grouped and matched in length where possible; 3) Route control signals away from noisy clocks; 4) Provide testpoints on VCC, /CE, /OE, /WE and DQ0–DQ7; 5) Add series dampers on long DQ lines and level-shifters if mixing voltages.

Common failure modes & debugging tips

Typical failures: incorrect pin wiring, missing decoupling, bus contention, timing violations and improper VPP handling. Quick triage: check VCC/GND with scope, confirm idle levels on /CE/ /OE/ /WE, isolate the flash from the bus and perform single-word program/verify cycles. Use a logic analyzer to capture command sequences and confirm timing margins against the timing checklist above.

Summary

  • The F28F010-90 is a 1 Mbit (128K x 8) parallel flash with 90 ns typical read and 5 V signaling; integrate using the pinout mapping and obey absolute operating limits for reliability.
  • Follow the wiring and layout checklist: tight decoupling, grouped address/data routing, series resistors on DQ lines and defined pull states for control pins to prevent accidental writes.
  • Implement robust firmware procedures: status polling with timeouts, verify-after-write, CRC/ECC and dual-bank update patterns to avoid bricking during in-field updates.

Frequently Asked Questions

How should engineers verify program and erase operations?

Engineers should poll the device status register after issuing program or erase commands, implement a conservative timeout slightly above the maximum guaranteed operation time, and perform a full read-back verification of the programmed region. Keep error counters and fallback recovery paths to handle intermittent failures.

What wiring practices prevent bus contention on a parallel flash interface?

Ensure each bus master releases data lines when not driving, use pull-ups or pull-downs to define inactive levels, and include series resistors on DQ lines for damping. During bring-up, isolate the flash and validate single-master control to eliminate contention before adding other bus agents.

Which testpoints and measurements speed debugging during bring-up?

Place accessible testpoints on VCC, GND, /CE, /OE, /WE and representative DQ lines. Measure supply stability under load, capture command sequences with a logic analyzer, and use a scope to confirm timing and signal integrity. A defined pattern test (write/read/verify) is the fastest functional verification.