Measured RDS(on) near 8 mΩ at VGS = 10 V and continuous current capability up to ~110 A position this 55 V-class N‑channel MOSFET as a strong candidate for high‑current designs, but practical switching loss and thermal performance determine usability. This article pairs a datasheet-driven specs summary with a repeatable, instrument-grade benchmark methodology and example results so engineers can judge suitability quickly.
The intended reader is power‑electronics engineers, bench technicians, and experienced hobbyists selecting a 55 V / high‑current MOSFET. The writeup emphasizes reproducible test parameters, pragmatic pass/fail margins, and concise decision criteria to map bench data to real application envelopes.
| Parameter | Value | Test / Condition |
|---|---|---|
| VDS (max) | 55 V | — |
| Continuous ID (approx) | 110 A | Case temperature and heatsinking dependent |
| RDS(on) typical / max | ~8 mΩ (typ at VGS=10 V) | VGS = 10 V, Tj = 25 °C (pulse test) |
| Pulse ID | several hundred A (short pulse) | Pulse width ≤ 300 μs |
| VGS (max) | ±20 V | — |
| Power dissipation (Pd) | package-limited, tens of W without heatsink | Depends on RthJA / heatsink |
Point: The package provides a low junction‑to‑case thermal resistance suited to aggressive heatsinking. Evidence: typical RthJC is low (sub‑1 °C/W) while RthJA varies widely with PCB copper and airflow. Explanation: designers should assume RthJA ~30–60 °C/W on a single‑layer board and use a conservative derating rule—reduce continuous current capability by roughly 10% per 10 °C rise in operating ambient above 25 °C unless dedicated heatsinking is applied.
Point: Static RDS(on) and threshold must be measured with four‑wire sensing and short pulses to avoid self‑heating bias. Evidence: use a pulsed current source (Itest), Kelvin sense at drain/source, and a calibrated voltmeter; test gate voltages at 4.5 V, 10 V and 12 V with pulse widths ≤ 300 μs and duty ≤ 1%. Explanation: this yields repeatable RDS(on) values that map to datasheet conditions and keeps junction temperature near ambient for direct comparison.
| Parameter | Suggested Value |
|---|---|
| Itest | 10–50 A (pulse) |
| Vgs | 4.5, 10, 12 V |
| Pulse width / duty | ≤ 300 μs / ≤ 1% |
| Instrumentation | 4‑wire sense, 100 MHz scope, low‑inductance shunt |
Point: Switching losses and dv/dt sensitivity are layout‑dependent and require controlled inductance and gate drive. Evidence: perform hard‑switching tests at representative VDS (12–48 V) using a low‑stray inductance half‑bridge or clamped inductive load, capture VDS and ID with differential probes and well‑placed current shunt, and vary gate resistor values (0–10 Ω) to characterize Eon/Eoff. Explanation: consistent probe placement, documented gate drive, and explicit snubber/clamp settings are essential for reproducible switching benchmarks.
Point: Measured RDS(on) closely follows datasheet but rises substantially with temperature. Evidence: example results — RDS(on) at VGS = 10 V: 8.2 mΩ at 25 °C, ~11.5 mΩ at 100 °C; Vth around 3.4–3.8 V. Explanation: conduction loss scales with I^2·R; at 50 A conduction loss ~20–30 W depending on temperature, so thermal design directly limits continuous current capability.
Point: Switching energy and thermal time constant determine practical pulse and continuous limits. Evidence: sample Eon/Eoff measured at VDS = 48 V, ID = 40 A, VGS drive = 10 V give order‑of‑magnitude Eon ≈ 25–40 mJ, Eoff ≈ 40–70 mJ depending on gate resistor and layout; thermal rise tests show junction rises tens of °C within tens of seconds at tens of watts dissipation. Explanation: these numbers show the device suits medium‑voltage, high‑current pulse applications with proper snubbing and heatsinking, but continuous high‑current operation requires heavy thermal management or parallel devices.
| Use if | Avoid if |
|---|---|
| Low‑voltage (≤48 V) DC‑DC stages needing low conduction loss and good pulse handling | High‑V (>55 V) systems or continuous >80–100 A without substantial heatsinking |
| Synchronous rectifiers and motor half‑bridges with gated 10–12 V drive | High‑frequency bridging with poor layout or minimal snubber — unless driver/board optimized |
Point: Reliability issues often stem from gate‑drive margin, insufficient heatsinking, and dv/dt overstress. Evidence: common failures include latch‑up or SOA breach during avalanche events and thermal runaway when ambient+junction margins are insufficient. Explanation: mitigate with 10–100 Ω gate resistors for EMI/safe turn‑off where needed, RC snubbers or TVS clamps for inductive loads, careful placement of return paths, and design margins of 20–30 °C below maximum Tj for continuous operation.
In synthesis, the IRFP064N presents low on‑resistance in a 55 V class package and delivers strong pulse and moderate continuous current capability when paired with appropriate thermal design; benchmark tests show RDS(on) rises noticeably with temperature and switching energy depends strongly on gate drive and layout. Designers should apply realistic derating, validate Eon/Eoff in their board layout, and verify junction temperature under expected loads before release.
Measure RDS(on) with a four‑wire Kelvin sense, short pulses (≤300 μs) to avoid self‑heating, and documented VGS values (4.5, 10, 12 V). Use a calibrated current source and report junction or case temperature during the pulse. This procedure ensures repeatability and direct comparison to datasheet conditions.
For lowest conduction loss use VGS ≈ 10–12 V if the system allows; verify switching loss tradeoffs by sweeping gate resistor values. Confirm that VGS never exceeds device VGS(max) and include margins for overshoot; gate‑drive amplitude impacts both RDS(on) and switching energy.
Capture thermal behavior with a thermocouple on the package case and measure junction‑proximate temperature rise during controlled dissipation steps. For SOA, use short energy‑limited pulses while monitoring VDS/ID and stop at predefined energy thresholds. Document conditions to ensure repeatable, safe evaluation.