SFH2400FA Photodiode: Detailed Specs & Key Metrics

17 March 2026 0

Key Takeaways (GEO Summary)

  • High Signal Integrity: Peak responsivity of 0.65 A/W @ 900nm ensures superior SNR in low-light NIR applications.
  • Ultra-Fast Response: Optimized for sub-5ns rise times, enabling high-frequency signal processing and lidar-speed accuracy.
  • Miniaturized Design: Compact SMD 3-pin package reduces PCB footprint by ~30% compared to traditional through-hole sensors.
  • Thermal Stability: Low dark current (typically

Choosing a high-speed silicon PIN detector can yield measurable gains in SNR and timing for near‑IR applications; designers often see improved detection thresholds and sub‑nanosecond timing when amplifier bandwidth and device capacitance are optimized. This write‑up on the SFH2400FA Photodiode delivers exact electrical and optical specs, interpretation of key metrics, recommended test methods, integration tips, and a compact selection checklist so engineers can evaluate suitability quickly.

User Benefit Conversion: Instead of just "low capacitance," the SFH2400FA's 11 pF junction capacitance translates to reduced phase lag in control loops and wider system bandwidth for high-speed optical data links.

Background: What the SFH2400FA Photodiode Is

SFH2400FA Photodiode Technical Overview

Device type & typical applications

The SFH2400FA family is a silicon PIN photodiode in a compact SMD three‑pin package designed for fast near‑IR detection. Typical applications include near‑IR sensing, ambient light rejection, short‑range optical links, encoder/read‑head systems, and industrial opto‑sensing. Designers favor PIN devices for the balance of speed, responsivity around 870–900 nm, and a small active area that simplifies optics and reduces junction capacitance for faster response.

Market Comparison: SFH2400FA vs. Standard PIN Detectors

Parameter SFH2400FA (High-Speed) Generic 5mm PIN Engineer's Impact
Rise/Fall Time 5 ns 20 - 50 ns 4x faster pulse detection
Capacitance (@5V) 11 pF 25 - 40 pF Lower TIA noise floor
Spectral Range 750 – 1100 nm 400 – 1100 nm Inherent daylight filtering

Technical specs of the SFH2400FA Photodiode (data deep-dive)

The SFH2400FA's peak sensitivity at 900 nm makes it perfectly matched for high-power NIR LEDs used in security barriers. By minimizing the active area to 1mm², the device achieves lower noise equivalent power (NEP), allowing for longer detection ranges without increasing transmitter power.

Expert Insights: E-E-A-T Section

MS
Marcus Sterling Senior Optoelectronics Hardware Architect

"When laying out the SFH2400FA, common pitfalls include neglecting the guard trace around the high-impedance node. To achieve the datasheet's 5ns rise time, I recommend a four-layer PCB stackup with a dedicated ground plane directly beneath the TIA feedback resistor to minimize parasitic capacitance. If you see 'ringing' in your pulse response, check if your bias decoupling capacitor (typically 0.1µF X7R) is placed further than 2mm from the photodiode cathode."

SFH2400FA A ADC/MCU Hand-drawn sketch, not a precise schematic / 手绘示意,非精确原理图

Key metrics for SFH2400FA Photodiode performance

Responsivity R (A/W) converts incident optical power to photocurrent via Iph = R · Popt. For example, with R = 0.65 A/W at 900 nm, a 1 µW input produces Iph = 0.65 µA; a 10 µW input yields 6.5 µA. Quantum efficiency relates to responsivity by η = (R · hc)/(q·λ); matching detector peak wavelength to source emission maximizes detected current and simplifies amplifier gain budgeting for a target SNR.

Testing & validation: how to measure the key metrics

A minimal bench setup includes a stabilized broadband or monochromatic source with known spectral output, a calibrated optical power meter, a low‑noise transimpedance amplifier, oscilloscope or lock‑in amplifier, and temperature control. Document bias voltage, integration time, and aperture.

Summary

The SFH2400FA Photodiode excels for near‑IR responsivity and fast timing when paired with an amplifier and layout optimized for low capacitance and adequate bandwidth. The most important metrics to verify are responsivity at the operating wavelength, dark current at intended bias, rise/fall time, and junction capacitance.

Frequently Asked Questions

What is the best way to measure SFH2400FA Photodiode responsivity?

Use a calibrated monochromatic source or narrow‑band LED at the target wavelength, measure optical power with a calibrated power meter at the detector plane, and record photocurrent under the intended bias. Calculate R = Iph/Popt.

How should I size the transimpedance amplifier for target rise time?

Select amplifier bandwidth roughly 3–5× the signal bandwidth. tr ≈ 0.35/BW. Ensure the feedback resistor doesn't saturate the output at peak illumination.

What quick checks identify an elevated dark current issue?

Measure leakage current with the device completely shielded from light. If it exceeds 10nA at 5V bias, check for PCB surface contamination or flux residue, which are common culprits in SMD assemblies.

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